semiconductor device in Vietnamese
@Chuyên ngành kỹ thuật
-dụng cụ bán dẫn
-dụng cụ mạch rắn
-linh kiện bán dẫn
@Lĩnh vực: toán & tin
-thiết bị bán dẫ
Sentence patterns related to "semiconductor device"
1. Semiconductor device having trench wiring and process for fabricating semiconductor device
2. Flux activator, adhesive resin composition, adhesive paste, adhesive film, semiconductor device fabrication method, and semiconductor device
3. Tin, solder alloy, and semiconductor device
4. Switching power source device, semiconductor device, and ac/dc converter
5. Semiconductor device having germanium active layer with underlying diffusion barrier layer
6. Epoxy-based composition, adhesive film, dicing die-bonding film and semiconductor device
7. Non-planar semiconductor device having self-aligned fin with top blocking layer
8. Semiconductor device with channel alignment and strained silicon and method of manufacture
9. Dicing-tape-integrated adhesive sheet, semiconductor device, multilayered circuit board and electronic component
10. Method and circuit for providing adjustable control of short circuit current through a semiconductor device
11. A vector (124) of initial characteristic values associated with the semiconductor device (200) is provided.
12. A semiconductor device (28) is supported by a substrate (8) with a smaller lattice constant.
13. Wave aberration measuring instrument, exposure apparatus, semiconductor device manufacturing system, and method for manufacturing same
14. The semiconductor device is selected from a group including p-n junction diodes and Schottky barier diodes.
15. A cured product, for example, can be applied as a sealant or an adhesive material for a semiconductor device.
16. In July 1959, he filed for U.S. Patent 2,981,877 "Semiconductor Device and Lead Structure", a type of integrated circuit.
Vào tháng 7 năm 1959, ông đã đăng ký bằng sáng chế Hoa Kỳ 2981877, "Semiconductor device-and-lead Structure", một loại mạch tích hợp.
17. The aluminum oxide particles are used as abrasive grains for polishing semiconductor device substrates, hard disk substrates or display substrates.
18. However, as semiconductor device fabrication is significantly more expensive than printed circuit board manufacture, this adds cost to the final product.
19. Whereby, a contactor for testing a semiconductor device with improved durability, wear resistance, and abrasion resistance, and a prolonged lifespan, can be obtained.
20. A first layer (26) is formed on a plate (23) transparent to ablating radiation, and a second layer (32) on the semiconductor device (31).
21. Citation: Artificially introduced atomic-level sensors enable measurements of Anelectric field within working semiconductor device (2017, February 2) retrieved 27 August 2021 from https://phys.org
22. The invention relates to a semiconductor device provided with an organic material which is formed by a solid-state mixture of organic donor and organic acceptor molecules.
23. The invention relates to a semiconductor device, for example an IC having conductor tracks (3) of a metal (3) exhibiting a better conductance than aluminium, such as copper, silver, gold or an alloy thereof.
24. ‘The Conductive sections work as heat Conductive channels between the wiring board and the semiconductor device.’ ‘Under most circumstances, the matter in stars is so highly electrically Conductive that magnetic fields can survive for millions or billions of years.’
25. Provided is a method for producing a semiconductor device, said method making it possible to suppress the occurrence of voids in an interface between an adherend and a sheet-like resin composition, and making it easy to predict an amount of protrusion after mounting.
26. In addition, the method for manufacturing the semiconductor device test contactor according to the present invention includes the steps of: molding the main body using mixed thermally conductive material of silicon and alumina; forming the through-holes in the vertical direction of the main body; and filling the through-holes with the conductive powder.
27. According to one embodiment of the present invention, when a power supply device having first and second amplification units which share an energy storage element is used, it is possible to reduce voltage stress of a semiconductor device and to consistently maintain output voltage outputted to the first and second amplification units while individually adjusting the amplification rates of the first and second amplification units.
28. According to one embodiment of the present invention, when a power supply device comprising first and second amplification units which share an energy storage element is used, it is possible to reduce voltage stress of a semiconductor device and to consistently maintain voltages outputted to the first and second amplification units by individually adjusting the amplification rates of the first and second amplification units.