semiconductor material in Vietnamese

@Chuyên ngành kỹ thuật
@Lĩnh vực: điện tử & viễn thông
-vật liệu bán dẫ

Sentence patterns related to "semiconductor material"

1. In addition, the second semiconductor material includes an alloy of the first semiconductor material with an alloying constituent.

2. Light-stable semiconductor material based on amorphous germanium and process for manufacturing it

3. Integrated circuit devices are formed by sequentially disposing one or more levels of semiconductor material on an acceptor substrate, and fabricating circuitry on each level of semiconductor material before disposition of a next higher level.

4. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides.

5. The absorption region includes a first type of semiconductor material (Ge) having a first refractive index.

6. Said contact plate (2) contains an alloy partner which can form an eutectic together with the semiconductor material.

7. The surface in the p - type - type semiconductor material at which the donor and acceptor concentration are equal.

8. Also called: Acceptor impurity electronics an impurity, such as gallium, added to a semiconductor material to increase its p-type conductivity by …

9. Mercury(II) iodide is a semiconductor material, used in some x-ray and gamma ray detection and imaging devices operating at room temperatures.

Thuỷ ngân (II) iođua là một chất bán dẫn, được sử dụng trong một số thiết bị phát hiện tia X và tia gamma hoạt động ở nhiệt độ phòng.

10. Shift electrodes forming a shift register are driven by negative electrical potentials and accumulations of holes in p type semiconductor material represent data.

11. The invention relates to a field effect transistor with a heterostructure, comprising a support material, which has a stress-relieved monocrystalline semiconductor layer (3) consisting of a first semiconductor material (Si), a strained monocrystalline semiconductor layer (4), which has a semiconductor alloy (GexSi1-x), a fraction x of a second semiconductor material being freely selectable.

12. A new amorphous semiconductor material which does not age under the action of light is particularly suitable for red-sensitive photovoltaic components and is highly photosensitive.

13. The organic and/or amorphous semiconductor material may be printed atop a substrate of the device, the same substrate upon which antenna elements of the RFID device are located.

14. A germanium- and/or carbon-containing silicon-alloy is applied to a substrate made, in particular, from silicon, in or on which a light-active material, for example, III-V semiconductor material, in particular, indium arsenide, is applied.

15. Thin-film solar cells (TFSCs) are made by depositing a thin film of highly photosensitive inorganic semiconductor material such as cadmium telluride (CdTe) or amorphous silicon (a-Si) or copper indium gallium selenide (CIS/CIGS) on a substrate.

16. Abasic manufactures Silicon Carbide in Crude, Macro Grits, Micro Grits, and Powders to suit many industries and applications including Refractories, Ceramics, coated and bonded Abrasives, Cast iron and steel additives, wire sawing for silicon chips and as semiconductor material.

17. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.

18. Gallium Arsenide (GaAs) devices Semiconductor integrated-circuit devices that are implemented using gallium Arsenide as the intrinsic semiconductor material in preference to, say, silicon.Gallium Arsenide has certain advantages over other semiconductor materials, in particular in high-speed applications and in the fabrication of optical and optically coupled devices such as light-emitting

19. The invention relates to a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a crucible wall of a crucible base body is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2).

20. The invention relates to a photo-acoustic gas sensor, comprising a resonance body and a device for detecting a vibration of the resonance body, comprising a device for optically detecting the location of at least one partial surface of the resonance body, wherein the resonance body and the device for detecting a vibration are disposed on exactly one substrate, and the resonance body is formed by means of at least one first recess of the substrate, and the substrate comprises a semiconductor material.