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36. In addition, the second semiconductor material includes an alloy of the first semiconductor material with an alloying constituent.

37. One such method may include depositing a semiconductor layer (14) on a semiconductor substrate (12), depositing an adynamic diamond layer (16) on the semiconductor layer (14) opposite the semiconductor substrate (12), and coupling a support substrate (18) to the adynamic diamond layer (16) opposite the semiconductor layer (14) to support the adynamic layer.

38. The invention relates to a field effect transistor with a heterostructure, comprising a support material, which has a stress-relieved monocrystalline semiconductor layer (3) consisting of a first semiconductor material (Si), a strained monocrystalline semiconductor layer (4), which has a semiconductor alloy (GexSi1-x), a fraction x of a second semiconductor material being freely selectable.

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65. In semiconductor physics, an Acceptor is a dopant atom that when added to a semiconductor can form a p-type region

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