gallium arsenide field-effect transistor (gaas fet) in Vietnamese

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1. Gallium Arsenide (GaAs): Gallium Arsenide (chemical formula GaAs) is a semiconductor compound used in some diode s, field-effect transistor s (FETs), and integrated circuit s (ICs)

2. Gallium Arsenide Integrated Circuits (Gaas Ic) Symposium, 2001 IEEE

3. Gallium Arsenide Integrated Circuits (Gaas Ic) Symposium, 2001 IEEE [IEEE Gallium Arsenide Integrated Circuit Symposium (23rd : 2001 : Seattle, Washington)] on Amazon.com

4. Gallium Arsenide synonyms, gallium Arsenide pronunciation, gallium Arsenide translation, English dictionary definition of gallium Arsenide

5. Aluminium Arsenide; aluminium gallium Arsenide; boron Arsenide; cadmium Arsenide; cobalt Arsenide; copper Arsenide; gallium Arsenide;

6. Gallium Arsenide etchants offer isotropic or anisotropic etching of gallium Arsenide and ternary compounds such as gallium indium Arsenide and aluminum gallium Arsenide

7. Gallium Arsenide An alloy of gallium and arsenic compound (GaAs) that is used as the base material for chips

8. Gallium Arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.

9. Gallium Arsenide definition, a crystalline and highly toxic semiconductor, GaAs, used in light-emitting diodes, lasers, and electronic devices

10. Vertical Junction Field Effect Transistor

11. Gaas Ic Symposium Technical Digest 2000: Seattle, Washington November 5-8, 2000 [IEEE Gallium Arsenide Integrated Circuit Symposium (22nd : 2000 : Seattle, Washington)] on Amazon.com

12. Gallium Arsenide (GaAs) devices Semiconductor integrated-circuit devices that are implemented using gallium Arsenide as the intrinsic semiconductor material in preference to, say, silicon.Gallium Arsenide has certain advantages over other semiconductor materials, in particular in high-speed applications and in the fabrication of optical and optically coupled devices such as light-emitting

13. ‘Gallium Arsenide is also used in lasers, such as those present in a compact disc player, in transistors, and in photovoltaic cells.’ ‘These have an indium Arsenide core surrounded by gallium Arsenide and an indium-gallium Arsenide alloy.’ ‘Domeykite, the copper Arsenide, was named in his honor.’

14. Drive circuitry for a mos field effect transistor

15. Field effect transistor structure with abrupt source/drain junctions

16. Cutting machines for semiconductor substrates made of sapphire, silicon, silicon carbide, glass, crystal, lithium tantalite, gallium arsenide, indium phosphide, gallium nitride or aluminum gallium arsenide and bonded wafers of these substances

17. A junction field effect transistor comprises a silicon-on-insulator architecture.

18. A Darlington-type amplifier (10) having an input field effect transistor and an output bipolar transistor (T¿2?)

19. The magnetic field effect transistor comprises: a current control part; and a magnetic-field applying part.

20. is connected to the drain electrode of the first field effect transistor (102).

21. The self bias is commonly used Biasing type of junction field effect transistor

22. Semiconductor with field effect transistors therein has a substantial metallic source bridge joining the adjacent FET sources.

23. One useful application of SWNTs is in the development of the first intermolecular field-effect transistors (FET).

24. A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) are formed by patterning of a gate dielectric layer, a thin silicon layer, and a silicon-germanium alloy layer.

25. Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement