field effect in Vietnamese

@Chuyên ngành kỹ thuật
-hiệu ứng trường
@Chuyên ngành kỹ thuật
-hiệu ứng trường

Sentence patterns related to "field effect"

1. Vertical Junction Field Effect Transistor

2. Junction Field Effect Transistors (JFETs)

3. Drive circuitry for a mos field effect transistor

4. Field effect transistor structure with abrupt source/drain junctions

5. Circuits using four terminal junction field effect transistors (JFETs) are disclosed.

6. Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys

7. A junction field effect transistor comprises a silicon-on-insulator architecture.

8. The devices include diodes, bipolar junction transistors, and field effect transistors.

9. Tunnel junction field effect transistors having self-aligned source and gate electrodes

10. is connected to the drain electrode of the first field effect transistor (102).

11. The self bias is commonly used Biasing type of junction field effect transistor

12. A potential-free control module is disclosed for IGBT's or field effect transistors.

13. Unit consisting of two junction field effect transistors contained in a dual leadframe housing

14. A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) are formed by patterning of a gate dielectric layer, a thin silicon layer, and a silicon-germanium alloy layer.

15. Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement

16. Blur can also be used to achieve a shallow depth of field effect in images

17. Unit consisting of two junction field effect transistors contained in a dual lead frame housing

18. The magnetic field effect transistor comprises: a current control part; and a magnetic-field applying part.

19. Junction field effect transistors in germanium and silicon-germanium alloys and method for making and using

20. Semiconductor with field effect transistors therein has a substantial metallic source bridge joining the adjacent FET sources.

21. A European research group is the first that has developed an organic light emitting field effect transistor.

22. The MOSFET (metal–oxide–semiconductor field-effect transistor) is a device that amplifies or switches electronic signals.

23. According to some embodiments, the device can be a normally-off SiC vertical junction field effect transistor.

24. One useful application of SWNTs is in the development of the first intermolecular field-effect transistors (FET).

25. The operating system provides a fully remote control by the refitting with field effect transistors as fast switches.

26. A Darlington-type amplifier (10) having an input field effect transistor and an output bipolar transistor (T¿2?)

27. A manufacturing method of tunneling field effect transistor (TFET) based on flat face processing self-aligned is provided.

28. Besides MOS-based structures, additional work was carried out on junction gate field-effect transistors and Schottky barrier diodes.

29. As an alternative to the cited bipolar transistors, the inventive transistor circuit also comprises correspondingly interconnected field-effect transistors.

30. This has led to the production of an organic light-emitting field-effect transistor (OLET) with pronounced ambipolar current characteristics.

31. Unlike pinch off, the term threshold voltage is unambiguous and refers to the same concept in any field-effect transistor.

Không giống như trạng thái cắt, thuật ngữ "điện áp ngưỡng" là rõ ràng và đề cập đến cùng một khái niệm trong bất kỳ transistor hiệu ứng trường nào..

32. The cathode-end emitter region and the adjacent emitter region form the source and drain of a MOS field-effect transistor.

33. Biasing of Junction Field Effect Transistor or Biasing of JFET October 27, 2020 November 18, 2018 by Electrical4U Before going to actual topic let us know what is a pinch-off voltage of a junction field effect transistor because it takes a vital role to decide the Biasing …

34. In particular, control of current through a field-effect transistor by magnetic field has been demonstrated in such a single-tube nanostructure.

35. Fin field effect transistors can be formed on the at least one silicon-germanium alloy fin and the at least one silicon fin.

36. The slices (5) may be removed by utilizing triode alternating current switches, silicone controlled rectifiers, insulated gate bipolar transistors or field effect transistors.

37. The acoustic screen scan microscope makes use of the damping of a resonant acoustic oscillator (2) through the acoustic short-range field effect.

38. Gallium Arsenide (GaAs): Gallium Arsenide (chemical formula GaAs) is a semiconductor compound used in some diode s, field-effect transistor s (FETs), and integrated circuit s (ICs)

39. Field-Effect Transistor Memory This patent was issued to IBM inventor Robert Dennard June 19 for inventing a one-transistor dynamic RAM cell, which became the standard for computer memory.

40. Devices, such as opto-electronic devices (e.g., light-emitting diodes, laser diodes) and electronic devices (e.g., field-effect transistors, high-electron mobility transistors, heterojunction bipolar transistors), may include one or more of the zinc oxide alloys.

41. The new type DC solid state relay is a kind of new contactless switching device, with the new type IGBT and power field effect tube as the core and composed completely by solid state electron devices.

42. In an advantageous embodiment, the substrate comprises single-crystal silicon including one or more insulated gate field effect transistors (IGFETs), and/or capacitors, and the photoresponsive element comprises germanium and/or germanium alloy epitaxially grown from seeds on the silicon.

43. The invention relates to a field effect transistor with a heterostructure, comprising a support material, which has a stress-relieved monocrystalline semiconductor layer (3) consisting of a first semiconductor material (Si), a strained monocrystalline semiconductor layer (4), which has a semiconductor alloy (GexSi1-x), a fraction x of a second semiconductor material being freely selectable.

44. Amplifiers can be thought of as a simple box or block containing the amplifying device, such as a Bipolar Transistor, Field Effect Transistor or Operational Amplifier, which has two input terminals and two output terminals (ground being common) with the output signal being much greater than that of the input signal as it has been “Amplified”.

45. The present invention provides compound tunneling field effect transistors integrated on a silicon substrate and methods for fabricating the same, the present invention enables to increase tunneling efficiency with an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (eV) narrower than that of silicon, to increase a driving current (ON current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than that of silicon, and to increase simultaneously ON/OFF current ratio to a great amount by forming a drain region with a material having a bandgap wider than or equal to that of a channel region material to restrain OFF current to the utmost.